Kalendář akcí VŠCHT Praha

Controlling and Tailoring the Electronic Properties of Chemically Reactive 2D Materials


Datum: 11.9.2019  15:00 - 17:00      
Místo konání: posluchárna AI, budova A, VŠCHT Praha
Kategorie: Věda
Typ akce: Pozvánka, Přednáška
Přednášející: prof Mark C. Hersam
Jazyk akce: EN


Following the success of ambient-stable two-dimensional (2D) materials such as graphene and hexagonal boron nitride, new classes of chemically reactive layered solids are being explored since their unique properties hold promise for improved device performance [1]. For example, chemically reactive 2D semiconductors (e.g., black phosphorus (BP) and indium selenide (InSe)) have shown enhanced field-effect mobilities under controlled conditions that minimize ambient degradation [2,3]. In addition, 2D boron (i.e., borophene) is an anisotropic metal with a diverse range of theoretically predicted phenomena including confined plasmons, charge density waves, and superconductivity [4], although its high chemical reactivity has limited experimental studies to inert ultrahigh vacuum conditions [5-8]. Therefore, to fully study and exploit the majority of 2D materials, methods for mitigating or exploiting their relatively high chemical reactivity are required [9]. In particular, covalent organic functionalization of BP minimizes ambient degradation, provides charge transfer doping, and enhances field-effect mobility [10]. In contrast, noncovalent organic functionalization of borophene leads to the spontaneous formation of electronically abrupt lateral organic-borophene heterostructures [11]. By combining organic and inorganic encapsulation strategies, even highly chemically reactive 2D materials (e.g., InSe) can be studied and utilized in ambient conditions [12].


[1] A. J. Mannix, et al., Nature Reviews Chemistry, 1, 0014 (2017).

[2] D. Jariwala, et al., Nature Materials, 16, 170 (2017).

[3] J. Kang, et al., Advanced Materials, 30, 1802990 (2018).

[4] A. J. Mannix, et al., Nature Nanotechnology, 13, 444 (2018).

[5] A. J. Mannix, et al., Science, 350, 1513 (2015).

[6] G. P. Campbell, et al., Nano Letters, 18, 2816 (2018).

[7] X. Liu, et al., Nature Materials, 17, 783 (2018).

[8] X. Liu, et al., Nature Communications, 10, 1642 (2019).

[9] C. R. Ryder, et al., ACS Nano, 10, 3900 (2016).

[10] C. R. Ryder, et al., Nature Chemistry, 8, 597 (2016).

[11] X. Liu, et al., Science Advances, 3, e1602356 (2017).

[12] S. A. Wells, et al., Nano Letters, 18, 7876 (2018).


Professional Biography of Mark C. Hersam

Mark C. Hersam is the Walter P. Murphy Professor of Materials Science and Engineering and Director of the Materials Research Center at Northwestern University. He also holds faculty appointments in the Departments of Chemistry, Applied Physics, Medicine, and Electrical Engineering. He earned a B.S. in Electrical Engineering from the University of Illinois at Urbana-Champaign (UIUC) in 1996, M.Phil. in Physics from the University of Cambridge (UK) in 1997, and a Ph.D. in Electrical Engineering from UIUC in 2000. His research interests include nanomaterials, nanomanufacturing, scanning probe microscopy, nanoelectronic devices, and renewable energy. Dr. Hersam has received several honors including the Presidential Early Career Award for Scientists and Engineers, TMS Robert Lansing Hardy Award, AVS Peter Mark Award, MRS Outstanding Young Investigator, U.S. Science Envoy, MacArthur Fellowship, and eight Teacher of the Year Awards. An elected member of the National Academy of Inventors, Dr. Hersam has founded two companies, NanoIntegris and Volexion, which are commercial suppliers of nanoelectronic and battery materials, respectively. Dr. Hersam is a Fellow of MRS, AVS, APS, AAAS, SPIE, and IEEE, and also serves as an Associate Editor of ACS Nano.

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